Repair and build industrial-grade power electronics with the 50N65S1 / 50N65 50A IGBT, available now at the best price in Bangladesh from Electrapac. This Insulated Gate Bipolar Transistor (IGBT) combines the high-speed switching of a MOSFET with the high-current handling of a bipolar transistor. It is the gold standard in BD for high-stress applications like Inverter Welding Machines and Industrial UPS systems. Read more
The 50N65S1
(50N65) N-Channel IGBT is a high-performance power transistor
engineered for heavy-duty switching applications. At Electrapac,
we recommend this Insulated Gate Bipolar Transistor (IGBT) for technicians and
engineers working on high-voltage power electronics, as it combines the simple
gate drive of a MOSFET with the high-current, low-saturation voltage capability
of a bipolar transistor.
Product Overview
The 50N65 is
designed for high-speed switching and exceptional thermal durability. Rated
at 600V and 50A, this Trenchstop™ technology-based IGBT is built to
minimize switching losses, making it the perfect choice for high-frequency
inverters and power converters. Whether you are repairing an industrial welding
machine or building a custom motor controller, this component provides the
ruggedness required for demanding environments.
Key Features for Electrapac Customers
Technical Implementation Guide
To ensure
the longevity of your 50N65 in high-power circuits, follow
these professional tips:
Primary Applications
Why Shop at Electrapac?
We
understand that in power electronics, authenticity is everything. We source
our 50N65S1 IGBTs from reputable manufacturers to ensure they
handle the full 600V/50A load without catastrophic failure. Visit us
at for the heavy-duty semiconductors that power your world.
| Specifications | Descriptions |
|---|---|
| Model Number | 50N65S1 / FGA50N65S1 |
| Transistor Type | N-Channel IGBT (Field Stop Technology) |
| Collector-Emitter Voltage | (Vces})600V |
| Collector Current | (Ic) 100°C50A |
| Pulsed Collector Current | (Icm)150A |
| Gate-Emitter Voltage | (Vges)±20V |
| Collector-Emitter Saturation Voltage ($V_{ce(sat)}$) | 1.8V (Typical) |
| Maximum Power Dissipation ($P_d$) | 312W (at 25°C) |
| Operating Junction Temperature | -55°C to +150°C |
| Switching Speed | High Speed (Low switching loss) |
| Package | 1 x 1 |
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